Metal gate structure and methods thereof
US10283503B2 · kind B2 · utility
4Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Oct 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0172
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.