Dummy gate used as interconnection and method of making the same
US10283505B2 · kind B2 · utility
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1References
13Claims
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Assignee
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Key dates
| Filing date | Jan 30, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Jan 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process of using a dummy gate as an interconnection and a method of manufacturing the same are disclosed. Embodiments include forming on a semiconductor substrate dummy gate structures at cell boundaries, each dummy gate structure including a set of sidewall spacers and a cap disposed between the sidewall spacers; removing a first sidewall spacer or at least a portion of a first cap on a first side of a first dummy gate structure and forming a first gate contact trench over the first dummy gate structure; and filling the first gate contact trench with a metal to form a first gate contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.