Patent · US Active

Semiconductor device comprising an aperture array and method of producing such a semiconductor device

US10283541B2 · kind B2 · utility

2Cited by

1References

27Claims

0Family size

Assignee

AMS AG · AT

Inventors

Joerg Siegert · Graz, AT
Franz Schrank · Graz, AT
Martin Schrems · Langenbruck, DE

Key dates

Filing date	Nov 9, 2015
Grant date	May 7, 2019
Priority date	—
Expiry date	Dec 8, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/811
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A photosensor (2) is arranged in a semiconductor substrate (1) at a main surface (10), a dielectric layer (4) is arranged on or above the main surface, the dielectric layer including a metal layer (6) electrically connected with the photosensor, and an aperture layer (16) formed from an opaque or semitransparent material is arranged on or above the dielectric layer. The aperture layer is provided with an array of transparent aperture zones (18) above the photosensor, each of the aperture zones penetrating the aperture layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.