Patent · US Active

CMOS sensors and methods of forming the same

US10283548B1 · kind B1 · utility

6Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 31, 2018
Grant dateMay 7, 2019
Priority date—
Expiry dateJan 31, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/18
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a dielectric layer, an interconnect, a bonding pad and a dummy pattern. The semiconductor substrate has a pixel region and a circuit region. The dielectric layer is surrounded by the semiconductor substrate in the circuit region. The interconnect is disposed over the dielectric layer in the circuit region. The bonding pad is disposed in the dielectric layer and electrically connects the interconnect in the circuit region. The dummy pattern is disposed in the dielectric layer and surrounds the bonding pad in the circuit region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.