Semiconductor structure including high electron mobility transistor device
US10283614B1 · kind B1 · utility
7Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2018 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Feb 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor structure including a substrate, a first semiconductor layer, a second semiconductor layer, a gate electrode, a source electrode and a drain electrode. The first semiconductor layer contains a group III-V-VI semiconductor compound layer and is disposed on the substrate. The second semiconductor layer includes a group III-V semiconductor compound and is disposed on the first semiconductor layer. The gate electrode is disposed on the second semiconductor layer. The source electrode and the drain electrode are disposed on the second semiconductor layer beside the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.