Compensated photonic device structure and fabrication method thereof

US10283665B2 · kind B2 · utility

Assignee

• SiFotonics Technologies Co., Ltd. · KY

Inventors

• Mengyuan Huang · Cupertino, US
• Su Li · Beijing, CN
• Tzung-I Su · Yuanchang, TW
• Pengfei Cai · Beijing, CN
• Wang Chen · Beijing, CN
• Ching-yin Hong · Lexington, US
• Dong Pan · Taipei, TW

Key dates

• Filing date: Jun 2, 2017
• Grant date: May 7, 2019
• Expiry date: Jun 2, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/223

Abstract

Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.