Wang Chen
17Patents
4h-index
18Co-inventors
53Inventor score
Filing activity: Jul 18, 2002 → Dec 21, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6895540B2 | Mux scan cell with delay circuit for reducing hold-time violations | Physics | 18 | Expired |
| US7165232B2 | I/O circuit placement method and semiconductor device | Electricity | 11 | Expired |
| US6978411B2 | Memory test system for peak power reduction | Physics | 9 | Expired |
| US9780248B2 | High performance GeSi avalanche photodiode operating beyond Ge bandgap limits | Electricity | 5 | Active |
| US9287432B2 | Ge—Si P-I-N photodiode with reduced dark current and fabrication method thereof | Emerging Cross-Sectional Technologies | 3 | Active |
| US9299864B2 | Ge/Si avalanche photodiode with integrated heater and fabrication thereof | Emerging Cross-Sectional Technologies | 2 | Active |
| US9583664B2 | Ge/Si avalanche photodiode with integrated heater and fabrication method thereof | Emerging Cross-Sectional Technologies | 2 | Active |
| US9285651B2 | Electro-optic silicon modulator with longitudinally nonuniform modulation | Physics | 2 | Active |
| US9042417B2 | Photonic device structure and fabrication method thereof | Electricity | 1 | Active |
| US9478689B2 | High-speed germanium on silicon avalanche photodiode | Emerging Cross-Sectional Technologies | 1 | Active |
| US7394272B2 | Built-in self test for system in package | Physics | 1 | Expired |
| US10283665B2 | Compensated photonic device structure and fabrication method thereof | Electricity | 0 | Active |
| US10473853B2 | Fully integrated avalanche photodiode receiver | Electricity | 0 | Active |
| US10340409B2 | Compensated photonic device structure and fabrication method thereof | Electricity | 0 | Active |
| US9698296B2 | Compensated photonic device structure and fabrication method thereof | Electricity | 0 | Active |
| US9397243B2 | Ge—Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region | Emerging Cross-Sectional Technologies | 0 | Active |
| US9373938B2 | Photonic device structure and fabrication method thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.