Method of producing III nitride semiconductor light-emitting device
US10283671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2018 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of producing a III nitride semiconductor light-emitting device having an n-type semiconductor layer, a light emitting layer, a barrier layer, and a p-type semiconductor layer. The p-type semiconductor layer is formed by forming an electron blocking layer on the light emitting layer; supplying a carrier gas containing nitrogen to a surface of the electron blocking layer; and forming a second p-type contact layer made of AlyGa1-yN on the electron blocking layer after the nitrogen carrier gas supply step. The second p-type contact formation step is performed using a carrier gas containing hydrogen. Source gases of Al and Ga are supplied to form a first p-type contact layer made of AlxGa1-xN with a thickness of more than 0 nm and 30 nm or less directly on the electron blocking layer and directly under the second p-type contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.