Method for manufacturing silicon-containing thin film
US10290493B2 · kind B2 · utility
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2References
14Claims
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Assignee
Inventors
Key dates
| Filing date | May 5, 2015 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for forming a silicon-containing thin film using a chlorosilane compound represented by SinCl2n+2 (wherein, n is an integer of from about 3 to about 10), and a high-quality silicon nitride thin film can be formed to a uniform thickness on a surface including a protrusion or recess having a high aspect ratio by an atomic layer deposition method using an ammonia gas at a low temperature of particularly about 560° C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.