Memory devices, semiconductor devices and related methods
US10290575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2018 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jan 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Conductive structures include a plurality of conductive steps and a contact extending at least partially therethrough in communication with at least one of the plurality of conductive steps and insulated from at least another one of the conductive steps. Devices may include such conductive structures. Systems may include a semiconductor device and a stair step conductive structure having a plurality of contacts extending through a step of the stair step conductive structure. Methods of forming conductive structures include forming contacts in contact holes formed through at least one conductive step of a conductive structure. Methods of forming electrical connections in stair step conductive structures include forming contacts in contact holes formed through each step of the stair step conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.