Semiconductor device having a passivation layer and method of making the same
US10290596B2 · kind B2 · utility
2Cited by
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20Claims
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Key dates
| Filing date | Jun 8, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Jun 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor device includes depositing a dielectric layer over a conductive pad using a first deposition process. The method further includes depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD). The first deposition process is different from HDPCVD. A thickness of the dielectric layer is sufficient to prevent charges generated by depositing the first passivation layer from reaching the conductive pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.