Inventor · Taichung, TW

Yi-An Lin

33Patents
4h-index
39Co-inventors
59Inventor score

Filing activity: May 29, 2008 → May 30, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9443769B2 Wrap-around contact Electricity 474 Active
US8386454B2 Systems and methods for providing advanced search result page content Physics 8 Active
US8074116B2 Exception raised notification Physics 6 Active
US10755995B2 Warpage control of semiconductor die Electricity 4 Active
US9263252B2 Method of protecting an interlayer dielectric layer and structure formed thereby Electricity 4 Active
US9589803B2 Gate electrode of field effect transistor Electricity 4 Active
US7958109B2 Intent driven search result rich abstracts Physics 4 Active
US9941367B2 Wrap-around contact on FinFET Electricity 3 Active
US10290596B2 Semiconductor device having a passivation layer and method of making the same Electricity 2 Active
US9812551B2 Method of forming the gate electrode of field effect transistor Electricity 2 Active
US9337103B2 Method for removing hard mask oxide and making gate structure of semiconductor devices Electricity 2 Active
US8713096B2 State control of remote hosts for management of distributed applications Physics 2 Active
US10269649B2 Wrap-around contact on FinFET Electricity 2 Active
US10651091B2 Wrap-around contact on FinFET Electricity 1 Active
US8940597B2 In-situ metal gate recess process for self-aligned contact application Electricity 1 Active
US11114395B2 Post passivation interconnect Electricity 1 Active
US9865477B2 Backside polisher with dry frontside design and method using the same Electricity 1 Active
US10391608B2 Backside polisher with dry frontside design and method using the same Electricity 1 Active
US10453811B2 Post passivation interconnect and fabrication method therefor Electricity 1 Active
US9072127B2 Lighting system and its luminaries with a respective lamp control module Emerging Cross-Sectional Technologies 1 Active
US8853052B2 Method of manufacturing a semiconductor device Electricity 0 Active
US11450584B2 Warpage control of semiconductor die Electricity 0 Active
US11854898B2 Wrap-around contact on FinFET Electricity 0 Active
US11362000B2 Wrap-around contact on FinFET Electricity 0 Active
US10516031B2 Method of forming the gate electrode of field effect transistor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.