Semiconductor device and method for manufacturing same
US10290649B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 15, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Dec 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided above the foundation layer, a columnar portion, a hole, and a sealing film. The stacked body includes a plurality of conductive layers stacked with an air gap interposed. The columnar portion includes a semiconductor body. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and contacts the foundation layer. The hole extends in the stacking direction through the stacked body and forms a cavity communicating with the air gap. The sealing film plugs an upper end of the hole forming the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.