Engineered substrate including light emitting diode and power circuitry
US10290674B2 · kind B2 · utility
9Cited by
17References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2017 |
| Grant date | May 14, 2019 |
| Priority date | — |
| Expiry date | Apr 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gallium nitride based integrated circuit architecture includes a first electronic device including a first set of III-N epitaxial layers and a second electronic device including a second set of III-N epitaxial layers. The gallium nitride based integrated circuit architecture also includes one or more interconnects between the first electronic device and the second electronic device. The first electronic device and the second electronic device are disposed in a chip scale package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.