Qromis, Inc.
53Patents
53Active
53Granted
50Portfolio score
Filing activity: Apr 17, 2015 → Jan 31, 2023
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10290674B2 | Engineered substrate including light emitting diode and power circuitry | Electricity | 9 | Active |
| US10297445B2 | Engineered substrate structure for power and RF applications | Electricity | 8 | Active |
| US10134589B2 | Polycrystalline ceramic substrate and method of manufacture | Electricity | 6 | Active |
| US10763109B2 | Methods of manufacturing engineered substrate structures for power and RF applications | Electricity | 5 | Active |
| US10355120B2 | Gallium nitride epitaxial structures for power devices | Electricity | 5 | Active |
| US10535547B2 | Methods of forming a vertical semiconductor diode using an engineered substrate | Electricity | 5 | Active |
| US10734303B2 | Power and RF devices implemented using an engineered substrate structure | Electricity | 4 | Active |
| US10622468B2 | RF device integrated on an engineered substrate | Electricity | 3 | Active |
| US11011373B2 | Engineered substrate structures for power and RF applications | Electricity | 3 | Active |
| US10181419B2 | Vertical semiconductor diode manufactured with an engineered substrate | Electricity | 3 | Active |
| US10755986B2 | Aluminum nitride based Silicon-on-Insulator substrate structure | Electricity | 3 | Active |
| US10204778B2 | Method and system for vertical power devices | Electricity | 3 | Active |
| US10573516B2 | Methods for integrated devices on an engineered substrate | Electricity | 3 | Active |
| US10566190B2 | Polycrystalline ceramic substrate | Electricity | 2 | Active |
| US10395965B2 | Electronic power devices integrated with an engineered substrate | Electricity | 2 | Active |
| US10438792B2 | Methods for integration of elemental and compound semiconductors on a ceramic substrate | Electricity | 2 | Active |
| US11387101B2 | Methods of manufacturing engineered substrate structures for power and RF applications | Electricity | 2 | Active |
| US10510582B2 | Engineered substrate structure | Electricity | 2 | Active |
| US10141371B2 | Wide band gap device integrated circuit device | Electricity | 2 | Active |
| US10910258B2 | Engineered substrate structure and method of manufacture | Electricity | 2 | Active |
| US9997391B2 | Lift off process for chip scale package solid state devices on engineered substrate | Electricity | 2 | Active |
| US10964535B2 | Polycrystalline ceramic substrate and method of manufacture | Electricity | 2 | Active |
| US9806230B2 | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods | Electricity | 1 | Active |
| US10529613B2 | Electronic power devices integrated with an engineered substrate | Electricity | 1 | Active |
| US10833186B2 | Gallium nitride epitaxial structures for power devices | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.