Composition and method for polishing silicon carbide
US10294399B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jan 5, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Feb 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.