Plating method
US10294581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2015 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/163
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of plating a substrate, such as a wafer, by applying a voltage between the substrate and an anode is disclosed. The plating method includes: preparing a substrate having a recess formed in a surface thereof, a conductive layer being formed in at least a part of the recess; placing an insoluble anode and the substrate in contact with a copper sulfate plating solution containing an additive; applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source to plate the substrate; and shutting off a reverse electric current, which flows from the insoluble anode to the substrate via the plating power source, by a diode disposed between the insoluble anode and the substrate when the predetermined plating voltage is not applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.