Gate oxide structure and method for fabricating the same
US10297455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Mar 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a gate oxide layer on a substrate is provided, in which a region of the substrate is defined out by a shallow trench isolation (STI) structure. An oxide layer covers over the substrate and a mask layer with an opening to expose oxide layer corresponding to the region with an interface edge of the STI structure. The method includes forming a silicon spacer on a sidewall of the opening. A cleaning process is performed through the opening to expose the substrate at the region. An oxidation process is performed on the substrate at the region to form the gate oxide layer, wherein the silicon spacer is also oxidized to merge to an edge of the gate oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.