Process window widening using coated parts in plasma etch processes

US10297458B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Dongqing Yang · San Jose, US
• Tien Fak Tan · Campbell, US
• Peter M. Hillman · Wellington, NZ
• Lala Zhu · Fremont, US
• Nitin K. Ingle · San Jose, US
• Dmitry Lubomirsky · Cupertino, US
• Christopher Snedigar · Hayward, US
• Ming Xia · San Jose, US

Key dates

• Filing date: Aug 7, 2017
• Grant date: May 21, 2019
• Expiry date: Aug 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.