Method for producing semiconductor device and semiconductor device
US10297531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Sep 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor device includes forming, on a semiconductor substrate comprising a first surface on which an insulating layer covering a wiring structure and a first through via passing through the insulating layer are formed and a second surface opposed to, and facing away from, the first surface, a patterned first insulating film comprising at least one opening therethrough on the second surface, forming a through via hole inwardly of the second surface within which the wiring structure is exposed, by anisotropic dry etching into the second surface side of the semiconductor substrate through the at least one opening in the first insulating film, using a gas mixture containing SF6, O2, SiF4, and at least one of CF4, Cl2, BCl3, CF3I, and HBr, and forming a second through via in the through via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.