Method and apparatus for a thin film dielectric stack
US10297658B2 · kind B2 · utility
4Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2016 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Jun 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13144
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor having a substrate, a first electrode layer on the substrate, a first dielectric layer on the first electrode layer where the first dielectric layer has a columnar-oriented grain structure, a group of second dielectric layers stacked on the first dielectric layer where each of the group of second dielectric layers has a randomly-oriented grain structure, and a second electrode layer on the group of second dielectric layers. Other embodiments are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.