Bipolar transistor and method for producing the same
US10297680B2 · kind B2 · utility
1Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2018 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Apr 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor has a subcollector layer and a stack of collector, base, and emitter layers on the subcollector layer. On the subcollector layer are collector electrodes. On the base layer are base electrodes. The collector layer includes multiple doped layers with graded impurity concentrations, higher on the subcollector layer side and lower on the base layer side. Of these doped layers, the one having the highest impurity concentration is in contact with the subcollector layer and has a sheet resistance less than or equal to about nine times that of the subcollector layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.