Inventor · Nagaokakyo, JP

Shigeki Koya

63Patents
5h-index
30Co-inventors
68Inventor score

Filing activity: Feb 17, 2006 → Apr 6, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8335479B2 Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same Electricity 49 Active
US8159282B2 Semiconductor integrated circuit and high frequency module with the same Electricity 7 Active
US10056476B1 Heterojunction bipolar transistor Electricity 7 Active
US7336125B2 Power amplifier and transmitter Electricity 7 Active
US10002950B1 Bipolar transistor and method for producing the same Electricity 6 Active
US8200167B2 Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same Electricity 5 Active
US10629712B2 Heterojunction bipolar transistor Electricity 2 Active
US7783265B2 Switching element, antenna switch circuit and radio frequency module using the same Electricity 2 Active
US10777669B2 Heterojunction bipolar transistor Electricity 1 Active
US10297680B2 Bipolar transistor and method for producing the same Electricity 1 Active
US9444512B2 Semiconductor device and high-frequency module Electricity 1 Active
US7899412B2 Switching element, antenna switch circuit and radio frequency module using the same Electricity 1 Active
US10868155B2 Compound semiconductor device Electricity 1 Active
US10629591B2 Semiconductor device Electricity 1 Active
US11107909B2 Semiconductor device Electricity 1 Active
US10886388B2 Heterojunction bipolar transistor Electricity 1 Active
US11658180B2 Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes Electricity 0 Active
US10523161B2 Power amplification module Electricity 0 Active
US11329146B2 Semiconductor device Electricity 0 Active
US11196394B2 Power amplifier module Electricity 0 Active
US10923470B2 Semiconductor device Electricity 0 Active
US10964693B2 Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes Electricity 0 Active
US11984380B2 Semiconductor package, semiconductor device, semiconductor package-mounted apparatus, and semiconductor device-mounted apparatus Electricity 0 Active
US12009359B2 Semiconductor device Electricity 0 Active
US11476807B2 Power amplifier module Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.