Apparatus and methods for integrating magnetoresistive devices
US10297747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2018 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Apr 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is drawn to, among other things, a method of fabricating an integrated circuit device having a magnetoresistive device. In some aspects, the method includes forming the magnetoresistive device on a first contact of a substrate, wherein the magnetoresistive device includes a fixed magnetic region and a free magnetic region separated by an intermediate region; depositing a first dielectric material over the magnetoresistive device; depositing a second dielectric material over the first dielectric material; polishing a surface of the second dielectric material; forming a first cavity through the polished surface of the second dielectric material to expose a surface of the magnetoresistive device; and depositing an electrically conductive material in the first cavity to form a via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.