Patent assignee · US · COMPANY

Everspin Technologies, Inc.

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347Patents
344Active
347Granted
59Portfolio score

Filing activity: Jan 31, 2005 → Mar 29, 2024 · 37 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8747680B1 Method of manufacturing a magnetoresistive-based device Electricity 243 Active
US8119424B2 Electronic device including a magneto-resistive memory device and a process for forming the electronic device Electricity 68 Active
US8686484B2 Spin-torque magnetoresistive memory element and method of fabricating same Electricity 65 Active
US9166155B2 Method of manufacturing a magnetoresistive-based device Electricity 60 Active
US9419208B2 Magnetoresistive memory element and method of fabricating same Electricity 44 Active
US7502253B2 Spin-transfer based MRAM with reduced critical current density Physics 41 Active
US7572645B2 Magnetic tunnel junction structure and method Electricity 40 Active
US7932571B2 Magnetic element having reduced current density Physics 40 Active
US9136464B1 Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrier Emerging Cross-Sectional Technologies 40 Active
US9269894B2 Isolation of magnetic layers during etch in a magnetoresistive device Emerging Cross-Sectional Technologies 35 Active
US9093640B2 Method for manufacturing and magnetic devices having double tunnel barriers Electricity 31 Active
US8390283B2 Three axis magnetic field sensor Electricity 28 Active
US8685756B2 Method for manufacturing and magnetic devices having double tunnel barriers Electricity 27 Active
US7605437B2 Spin-transfer MRAM structure and methods Electricity 22 Active
US8923041B2 Self-referenced sense amplifier for spin torque MRAM Physics 18 Active
US9697880B2 Self-referenced read with offset current in a memory Physics 17 Active
US8518734B2 Process integration of a single chip three axis magnetic field sensor Electricity 17 Active
US9159906B2 Spin-torque magnetoresistive memory element and method of fabricating same Electricity 17 Active
US8242776B2 Magnetic sensor design for suppression of barkhausen noise Emerging Cross-Sectional Technologies 16 Active
US9575125B1 Memory device with reduced test time Physics 16 Active
US9548442B2 Magnetoresistive structure having two dielectric layers, and method of manufacturing same Electricity 15 Active
US9553258B2 Magnetoresistive memory element and method of fabricating same Electricity 15 Active
US9722174B1 Low dielectric constant interlayer dielectrics in spin torque magnetoresistive devices Electricity 15 Active
US7965077B2 Two-axis magnetic field sensor with multiple pinning directions Electricity 14 Active
US8257596B2 Two-axis magnetic field sensor with substantially orthogonal pinning directions Emerging Cross-Sectional Technologies 14 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.