Low-voltage threshold switch devices with current-controlled negative differential resistance based on electroformed vanadium oxide layer
US10297751B2 · kind B2 · utility
3Cited by
7References
24Claims
0Family size
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Key dates
| Filing date | Jan 26, 2017 |
| Grant date | May 21, 2019 |
| Priority date | — |
| Expiry date | Jan 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device comprising a substrate having a surface; a first electrode wire extending on said surface along a first direction; a vanadium pentoxide layer extending on and contacting at least a portion of said first electrode; a second electrode wire extending over said surface along a second direction, such that the second electrode wire extends on and contacts at least a portion of the vanadium pentoxide layer above the first electrode wire at a crossing point; wherein a region of vanadium dioxide is included in said vanadium pentoxide layer between the first and second electrodes at said crossing point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.