Wei Yi
42Patents
6h-index
65Co-inventors
68Inventor score
Filing activity: May 31, 2010 → Feb 14, 2025
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD758446S1 | Portion of a display screen with animated graphical user interface | General | 36 | Active |
| US8525553B1 | Negative differential resistance comparator circuits | Electricity | 15 | Active |
| USD864345S1 | Gun magnet mounting device | General | 10 | Active |
| USD757815S1 | Portion of a display screen with animated graphical user interface | General | 8 | Active |
| US8325507B2 | Memristors with an electrode metal reservoir for dopants | Electricity | 7 | Active |
| US8324976B2 | Oscillator circuitry having negative differential resistance | Electricity | 6 | Active |
| US9324421B2 | Method and circuit for switching a memristive device | Physics | 4 | Active |
| USD986715S1 | Hook | General | 4 | Active |
| US8830727B2 | Multi-level memory cell with continuously tunable switching | Physics | 4 | Active |
| US10297751B2 | Low-voltage threshold switch devices with current-controlled negative differential resistance based on electroformed vanadium oxide layer | Physics | 3 | Active |
| US10541274B2 | Scalable, stackable, and BEOL-process compatible integrated neuron circuit | Electricity | 3 | Active |
| US8848183B2 | Apparatus having nano-fingers of different physical characteristics | Emerging Cross-Sectional Technologies | 3 | Active |
| US8336217B2 | Node placement apparatus, system and method | Physics | 2 | Active |
| US11861488B1 | Scalable excitatory and inhibitory neuron circuitry based on vanadium dioxide relaxation oscillators | Electricity | 1 | Active |
| US8331129B2 | Memory array with write feedback | Physics | 1 | Active |
| US12127315B2 | High-voltage WRGB string light | Electricity | 1 | Active |
| US10397147B2 | Method, apparatus and device for exchanging name card | Electricity | 1 | Active |
| US8971091B2 | Method and circuit for switching a memristive device in an array | Physics | 1 | Active |
| US10903277B2 | Scalable, stackable, and BEOL-process compatible integrated neuron circuit | Electricity | 1 | Active |
| US8503217B2 | Reconfigurable crossbar memory array | Physics | 1 | Active |
| US10600961B2 | Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance | Electricity | 1 | Active |
| USD1056203S1 | Buoyancy compensator | General | 1 | Active |
| US11574679B2 | Neuromorphic memory circuit and method of neurogenesis for an artificial neural network | Physics | 1 | Active |
| US9337146B1 | Three-dimensional integrated circuit stack | Electricity | 1 | Active |
| US9276204B2 | Memristor with channel region in thermal equilibrium with containing region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.