Amorphous hydrogenated boron carbide low-k dielectric and method of making the same
US10301719B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 6, 2016 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Apr 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a low-dielectric-constant amorphous hydrogenated boron carbide film on a substrate includes positioning the substrate within a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a boron carbide precursor and introducing the boron carbide precursor into a carrier gas to form a carrier gas-precursor mixture. The method also includes introducing the carrier gas-precursor mixture into the PECVD chamber. The method also includes applying radio frequency power within the PECVD chamber to the carrier gas-precursor mixture to form one or more plasmas containing one or more species containing at least one of boron, carbon or hydrogen. The method also includes forming the low-dielectric-constant amorphous hydrogenated boron carbide film on the substrate within the PECVD chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.