Inventor · Beaverton, OR, US

Sean King

32Patents
7h-index
30Co-inventors
69Inventor score

Filing activity: Dec 27, 2000 → Apr 29, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8178436B2 Adhesion and electromigration performance at an interface between a dielectric and metal Electricity 446 Active
US7790631B2 Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal Electricity 72 Active
US9330963B2 Conformal low temperature hermetic dielectric diffusion barriers Electricity 18 Active
US8143159B2 Fabrication of interconnects in a low-k interlayer dielectrics Electricity 15 Active
US8785261B2 Microelectronic transistor having an epitaxial graphene channel layer Electricity 10 Active
US8120114B2 Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate Electricity 9 Active
US8461683B2 Self-forming, self-aligned barriers for back-end interconnects and methods of making same Emerging Cross-Sectional Technologies 8 Active
US6974772B1 Integrated low-k hard mask Electricity 7 Expired
US6761625B1 Reclaiming virgin test wafers Performing Operations; Transporting 7 Expired
US7759262B2 Selective formation of dielectric etch stop layers Electricity 6 Active
US9754821B2 Conformal low temperature hermetic dielectric diffusion barriers Electricity 6 Active
US8088665B2 Method of forming self-aligned low resistance contact layer Electricity 5 Active
US7816218B2 Selective deposition of amorphous silicon films on metal gates Electricity 5 Active
US7812455B2 Interconnect in low-k interlayer dielectrics Electricity 5 Active
US8039920B1 Methods for forming planarized hermetic barrier layers and structures formed thereby Electricity 4 Active
US7172960B2 Multi-layer film stack for extinction of substrate reflections during patterning Emerging Cross-Sectional Technologies 3 Expired
US9935002B2 Conformal low temperature hermetic dielectric diffusion barriers Electricity 2 Active
US8399317B2 Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor Electricity 2 Active
US10301719B1 Amorphous hydrogenated boron carbide low-k dielectric and method of making the same Electricity 1 Active
US11251076B2 Conformal low temperature hermetic dielectric diffusion barriers Electricity 0 Active
US12300537B2 Conformal low temperature hermetic dielectric diffusion barriers Electricity 0 Active
US8674484B2 Dielectric separator layer Electricity 0 Active
US11670545B2 Conformal low temperature hermetic dielectric diffusion barriers Electricity 0 Active
US10763161B2 Conformal low temperature hermetic dielectric diffusion barriers Electricity 0 Active
US7199473B2 Integrated low-k hard mask Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.