Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US10301745B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Aug 2, 2016 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Feb 3, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.