Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memory
US10304731B2 · kind B2 · utility
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8References
17Claims
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Key dates
| Filing date | Jan 19, 2018 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Jan 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is an apparatus that includes a ferroelectric capacitor disposed on a damascene barrier film, and fabrication methods thereof. The damascene barrier film includes a hydrogen barrier region and an oxygen barrier region, with the oxygen barrier being in contact with a bottom surface of the ferroelectric capacitor. Other embodiments are also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.