Wafer marking method
US10304778B2 · kind B2 · utility
0Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2014 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Disclosed is a wafer marking method using a laser for marking a wafer having processing tape attached thereto. The disclosed laser marking method comprises the steps of: penetrating a 532-nm wavelength laser beam through the processing tape attached to one side of the wafer; and performing marking on the one side of the wafer by moving the 532-nm wavelength laser beam at a predetermined velocity, wherein the 532-nm wavelength laser beam has a frequency of 8 kHz to 40 kHz, and an output power of 0.8 W to 2 W.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.