Semiconductor device having stressor and method of manufacturing the same

US10304840B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Keun-Hee Bai · Suwon-si, KR
• Myeong-Cheol Kim · Aachen, DE
• Kwan Heum Lee · Suwon-si, KR
• Do-Hyoung Kim · Gimhae-si, KR
• Jin-Wook Lee · Suwon-si, KR
• Seung Mo Ha · Seoul, KR
• Dong-Hoon Khang · Hwaseong-si, KR

Key dates

• Filing date: Mar 30, 2016
• Grant date: May 28, 2019
• Expiry date: Mar 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0133

Abstract

A semiconductor device includes a substrate, a fin active region pattern on the substrate, the fin active region pattern including an upper region and a lower region, a device isolation layer pattern surrounding the fin active region pattern, a gate pattern on the upper region of the fin active region pattern, and a stressor on the lower region of the fin active region pattern, wherein a top surface of the device isolation layer pattern is lower than a top surface of the upper region and higher than a top surface of the lower region.