Seung Mo Ha
17Patents
3h-index
39Co-inventors
52Inventor score
Filing activity: Jan 12, 2016 → Oct 17, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10411119B2 | Method of fabricating semiconductor device | Electricity | 4 | Active |
| US10622256B2 | Method of manufacturing semiconductor device using multiple patterning techniques | Electricity | 3 | Active |
| US10074717B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 3 | Active |
| US10529801B2 | Semiconductor device including isolation regions | Electricity | 2 | Active |
| US10622444B2 | FinFET semiconductor device with a dummy gate, first gate spacer and second gate spacer | Electricity | 2 | Active |
| US10964782B2 | Semiconductor device including isolation regions | Electricity | 1 | Active |
| US11515390B2 | Semiconductor devices | Electricity | 0 | Active |
| US11830911B2 | Semiconductor device including isolation regions | Electricity | 0 | Active |
| US9972538B2 | Methods for fabricating semiconductor device | Electricity | 0 | Active |
| US11575002B2 | Semiconductor device including isolation regions | Electricity | 0 | Active |
| US9985025B1 | Active pattern structure and semiconductor device including the same | Electricity | 0 | Active |
| US9966375B2 | Semiconductor device | Electricity | 0 | Active |
| US10629604B2 | Method of manufacturing semiconductor device having stressor | Electricity | 0 | Active |
| US11984448B2 | Semiconductor device | Electricity | 0 | Active |
| US12261200B2 | Semiconductor device including isolation regions | Electricity | 0 | Active |
| US10304840B2 | Semiconductor device having stressor and method of manufacturing the same | Electricity | 0 | Active |
| US11610966B2 | Semiconductor devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.