Trench power MOSFET having a trench cavity
US10304933B1 · kind B1 · utility
9Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2018 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Apr 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor includes a trench defined in a semiconductor substrate. A gate electrode is disposed in the trench and insulated from a sidewall of the trench by a gate dielectric. A shield electrode is disposed in the trench below the gate electrode and insulated from the gate electrode and the sidewall of the trench by a shield dielectric. The shield dielectric includes solid dielectric portions and a cavity disposed between the shield electrode and the sidewall of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.