Dual wavelength imaging cell array integrated circuit
US10304981B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Feb 17, 2017 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Sep 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A semiconductor device that includes an array of imaging cells is provided. Each imaging cell of the array of imaging cells includes an imaging region and first and second charge storage regions. Further, each imaging cell includes first and second quantum dot-in-quantum well (QD-in-QW) structures. The first QD-in-QW structure absorbs an incident electromagnetic radiation having a wavelength within a predetermined first wavelength band and generates a hole photocurrent. The second QD-in-QW structure absorbs an incident electromagnetic radiation having a wavelength within a predetermined second wavelength band and generates an electron photocurrent. Each imaging cell further includes p-type and n-type modulation doped QW structures that defines first and second buried QW channels. The first and second buried QW channels provide for lateral transfer of the hole and electron photocurrents for charge accumulation in the first and second charge storage regions, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.