Patent · US Active

Semiconductor pressure sensor for harsh media application

US10308502B2 · kind B2 · utility

4Cited by

5References

20Claims

0Family size

Assignee

MELEXIS TECHNOLOGIES NV · BE

Inventors

Laurent Otte · Brussels, BE
Jian Chen · Baoshan, TW
Appolonius Jacobus Van Der Wiel · Tessenderlo, BE

Key dates

Filing date	Feb 28, 2017
Grant date	Jun 4, 2019
Priority date	—
Expiry date	Feb 28, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/48137
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor pressure sensor assembly for measuring a pressure of an exhaust gas which contains corrosive components, comprising: a first cavity, a pressure sensor comprising first bondpads for electrical interconnection, a CMOS chip comprising second bondpads for electrical interconnection with the pressure sensor, an interconnection module having electrically conductive paths connected via bonding wires to the pressure sensor and to the CMOS chip; the interconnection module being a substrate with corrosion-resistant metal tracks, wherein the CMOS chip and part of the interconnection module are encapsulated by a plastic package.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.