One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations
US10311930B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2018 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Apr 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04L2209/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations is disclosed. PUF memory is configured to permanently one-time program an initial randomly generated PUF output from PUF MRAM bit cells accessed in an initial PUF read operation, to the same PUF MRAM bit cells accessed in the initial PUF read operation. In this manner, the initial PUF output is randomly generated due to process variations of the PUF MRAM bit cells to maintain an initial unpredictable memory state, but the PUF output will be reproduced for subsequent PUF read operations to the same PUF MRAM bit cells in the PUF memory array for reproducibility. The OTP of the PUF MRAM bit cells can be accomplished by applying breakdown voltage to the PUF MRAM bit cells during programming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.