Chando Park
60Patents
13h-index
48Co-inventors
80Inventor score
Filing activity: May 7, 2007 → Aug 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8611055B1 | Magnetic etch-stop layer for magnetoresistive read heads | Physics | 165 | Active |
| US8194365B1 | Method and system for providing a read sensor having a low magnetostriction free layer | Electricity | 163 | Active |
| US8559141B1 | Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface | Electricity | 156 | Active |
| US8537502B1 | Method and system for providing a magnetic transducer having improved shield-to-shield spacing | Emerging Cross-Sectional Technologies | 150 | Active |
| US8381391B2 | Method for providing a magnetic recording transducer | Emerging Cross-Sectional Technologies | 148 | Active |
| US9379314B2 | Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) | Electricity | 63 | Active |
| US9634237B2 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Electricity | 45 | Active |
| US10043967B2 | Self-compensation of stray field of perpendicular magnetic elements | Electricity | 36 | Active |
| US9142762B1 | Magnetic tunnel junction and method for fabricating a magnetic tunnel junction | Electricity | 23 | Active |
| US10483457B1 | Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array | Electricity | 22 | Active |
| US10311930B1 | One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations | Electricity | 21 | Active |
| US9269893B2 | Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch | Electricity | 17 | Active |
| US10381060B2 | High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array | Electricity | 17 | Active |
| US9824735B1 | System and method to generate a random number | Physics | 13 | Active |
| US9620706B2 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | Electricity | 9 | Active |
| US9590010B1 | Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer | Electricity | 8 | Active |
| US8619394B1 | Magnetic tunnel junction with barrier cooling for magnetic read head | Emerging Cross-Sectional Technologies | 8 | Active |
| US8958180B1 | Capping materials for magnetic read head sensor | Physics | 8 | Active |
| US9870811B2 | Physically unclonable function based on comparison of MTJ resistances | Physics | 7 | Active |
| US10134808B2 | Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) | Electricity | 6 | Active |
| US9318133B2 | Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field | Emerging Cross-Sectional Technologies | 6 | Active |
| US8427791B2 | Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same | Emerging Cross-Sectional Technologies | 5 | Active |
| US9064507B1 | Magnetic etch-stop layer for magnetoresistive read heads | Physics | 5 | Active |
| US9614147B2 | Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) | Electricity | 4 | Active |
| US8755152B1 | Method and system for providing an improved sensor stack for a recording head | Emerging Cross-Sectional Technologies | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.