Etch damage and ESL free dual damascene metal interconnect
US10312136B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Oct 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments relate to a semiconductor device manufacturing process. In the process, a substrate is provided, and a sacrificial layer is formed over the substrate. An opening is patterned through the sacrificial layer, and the opening is filled with conductive material. The sacrificial layer is removed while the conductive material is left in place. A first dielectric layer is formed along sidewalls of the conductive material that was left in place.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.