Method of improving surface smoothness of dummy gate

US10312163B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Hai Yang Zhang · Shanghai, CN
• Yan Wang · Shanghai, CN

Key dates

• Filing date: Jun 1, 2018
• Grant date: Jun 4, 2019
• Expiry date: Jun 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure relates to the field of semiconductor technologies, and discloses a method for manufacturing a semiconductor apparatus. An implementation of the method may include: providing a substrate structure; depositing a dummy gate material layer on the substrate structure; performing planarization processing on the dummy gate material layer; after the planarization processing, performing, according to surface roughness of the dummy gate material layer, first etching on the dummy gate material layer by using a fluorine-containing gas; after the first etching, forming a fluorine-containing polymer layer on the dummy gate material layer; and performing second etching on the substrate structure on which the fluorine-containing polymer layer is formed, to remove the fluorine-containing polymer layer, where the second etching includes etching a surface of the dummy gate material layer. The method of the present invention improves surface smoothness and thickness uniformity of the dummy gate material layer.