Stacked dies and dummy components for improved thermal performance
US10312221B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Dec 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device includes a stack of plural semiconductor chips. Each two adjacent semiconductor chips of the plural semiconductor chips is electrically connected by plural interconnects and physically connected by a first insulating bonding layer. A first stack of dummy chips is positioned opposite a first side of the stack of semiconductor chips and separated from the plural semiconductor chips by a first gap. Each two adjacent of the first dummy chips are physically connected by a second insulating bonding layer. A second stack of dummy chips is positioned opposite a second side of the stack of semiconductor chips and separated from the plural semiconductor chips by a second gap. Each two adjacent of the second dummy chips are physically connected by a third insulating bonding layer. The first, second and third insulating bonding layers include a first insulating layer and a second insulating layer bonded to the first insulating layer. An insulating layer is in the first gap and another insulating layer is in the second gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.