Semiconductor devices having work function metal films and tuning materials
US10312340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Sep 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.