Inventor · Hwaseong-si, KR

Hoon-Joo Na

39Patents
5h-index
58Co-inventors
68Inventor score

Filing activity: Aug 12, 2009 → Jan 12, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8293599B2 Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials Electricity 10 Active
US7972950B2 Method of fabricating semiconductor device having dual gate Electricity 7 Active
US9793368B2 Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth element Electricity 6 Active
US9780183B2 Semiconductor devices having work function metal films and tuning materials Electricity 6 Active
US8748251B2 Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices Electricity 6 Active
US10312340B2 Semiconductor devices having work function metal films and tuning materials Electricity 5 Active
US9287199B2 CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device Electricity 5 Active
US10906283B2 Wafer bonding apparatus for directly bonding wafers and a wafer bonding system having the same Performing Operations; Transporting 4 Active
US8786028B2 Semiconductor device and method of fabricating the same Electricity 4 Active
US10340358B2 Semiconductor device and method for fabricating the same Electricity 4 Active
US9806075B2 Integrated circuit devices having a Fin-type active region and methods of manufacturing the same Electricity 4 Active
US10600913B2 Semiconductor device and method for fabricating the same Electricity 3 Active
US9543300B2 CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device Electricity 2 Active
US10593670B2 Methods of manufacturing integrated circuit devices having a fin-type active region Electricity 2 Active
US8557651B2 Method of manufacturing a semiconductor device using an etchant Electricity 2 Active
US9786761B2 Integrated circuit device having an interfacial layer and method of manufacturing the same Electricity 2 Active
US9252058B2 Semiconductor device and method of fabricating the same Electricity 2 Active
US10756195B2 Integrated circuit device and method of manufacturing the same Electricity 1 Active
US10847515B2 Semiconductor devices with nanowires and methods for fabricating the same Electricity 1 Active
US9236313B2 Method of fabricating semiconductor device having dual gate Electricity 1 Active
US9812448B2 Semiconductor devices and methods for fabricating the same Electricity 1 Active
US10177149B2 Semiconductor devices with nanowires and with metal layers having different grain sizes Electricity 1 Active
US11728200B2 Wafer bonding apparatuses Electricity 0 Active
US8932922B2 Method of fabricating semiconductor device having dual gate Electricity 0 Active
US11967595B2 Semiconductor devices with nanowires and methods for fabricating the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.