High voltage device
US10312379B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jul 27, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Aug 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A high voltage device includes a semiconductor substrate, an ion well, a Schottky diode in the ion well, an isolation structure in the ion well surrounding the Schottky diode, and an assistant gate surrounding the Schottky diode. The assistant gate is disposed only on the isolation structure and is not in direct contact with the ion well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.