Patent · US Active

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US10312401B2 · kind B2 · utility

0Cited by

1References

14Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Werner Bergbauer · Windberg, DE
Thomas Lehnhardt · Regensburg, DE
Jürgen Off · Regensburg, DE
Joachim Hertkorn · Neukirchen, DE

Key dates

Filing date	Feb 13, 2015
Grant date	Jun 4, 2019
Priority date	—
Expiry date	Feb 13, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/036
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing an electronic semiconductor chip and a semiconductor chip are disclosed. In embodiments, the method includes providing a growth substrate having a growth surface formed by a flat region having a plurality of three-dimensional surface structures on the flat region, directly applying a nucleation layer of oxygen-containing AlN over a large area to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the flat region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.