Tunable resistive element
US10312441B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2018 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Apr 9, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer are arranged in series between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.