Inventor · Zürich, CH

Veeresh V. Deshpande

33Patents
3h-index
31Co-inventors
55Inventor score

Filing activity: Sep 12, 2014 → Dec 21, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9570169B1 Resistive memory device Physics 21 Active
US10657440B2 Optical synapse for neuromorphic networks Physics 4 Active
US10516108B2 Tunable resistive element Physics 3 Active
US10312441B1 Tunable resistive element Physics 3 Active
US9786664B2 Fabricating a dual gate stack of a CMOS structure Electricity 2 Active
US10546992B2 Buried electrode geometry for lowering surface losses in superconducting microwave circuits Electricity 2 Active
US9984929B1 Fabricating contacts of a CMOS structure Electricity 2 Active
US11157807B2 Optical neuron Physics 2 Active
US10395732B2 Resistive memory apparatus using variable-resistance channels with high- and low-resistance regions Physics 2 Active
US9977325B2 Modifying design layer of integrated circuit (IC) Physics 1 Active
US11521055B2 Optical synapse Physics 1 Active
US9917164B1 Fabricating raised source drain contacts of a CMOS structure Electricity 1 Active
US9997409B1 Fabricating contacts of a CMOS structure Electricity 1 Active
US9953125B2 Design/technology co-optimization platform for high-mobility channels CMOS technology Electricity 1 Active
US11138501B2 Hardware-implemented training of an artificial neural network Physics 1 Active
US10254642B2 Modifying design layer of integrated circuit (IC) using nested and non-nested fill objects Physics 1 Active
US10395168B2 Tunable optical neuromorphic network Physics 1 Active
US9881921B2 Fabricating a dual gate stack of a CMOS structure Electricity 1 Active
US10304934B2 Fabricating raised source drain contacts of a CMOS structure Electricity 1 Active
US10103234B1 Fabricating raised source drain contacts of a CMOS structure Electricity 0 Active
US9451684B2 Dual pulse driven extreme ultraviolet (EUV) radiation source method Electricity 0 Active
US9704757B1 Fabrication of semiconductor structures Electricity 0 Active
US9673104B1 Fabrication of a CMOS structure Electricity 0 Active
US9923022B2 Array of optoelectronic structures and fabrication thereof Electricity 0 Active
US10037800B2 Resistive memory apparatus using variable-resistance channels with high- and low-resistance regions Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.