Patent · US Active

System and method for extreme ultraviolet source control

US10314154B1 · kind B1 · utility

12Cited by

1References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Chun-Chia Hsu · Hsinchu, TW
Chieh Hsieh · Hsinchu, TW
Shang-Chieh Chien · Tsuen Wan, CN
Li-Jui Chen · Hsinchu, TW
Po-Chung Cheng · Zhongpu, TW
Tzung-Chi Fu · Miaoli City, TW
Bo-Tsun Liu · Taipei, TW

Key dates

Filing date	Feb 27, 2018
Grant date	Jun 4, 2019
Priority date	—
Expiry date	Feb 27, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH05G2/0027
WIPO fieldMedical technology
WIPO sectorInstruments

Abstract

An EUV radiation source module includes a target droplet generator configured to generate target droplets; a first laser source configured to generate first laser pulses that heat the target droplets to produce target plumes; a second laser source configured to generate second laser pulses that heat the target plumes to produce plasma emitting EUV radiation; third and fourth laser sources configured to generate first and second laser beams, respectively, that are directed onto a travel path of the target plumes, wherein the first and second laser beams are substantially parallel; and a monitor configured to receive the first and second laser beams reflected by the target plumes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.