Methods of forming an ALD-inhibiting layer using a self-assembled monolayer
US10316406B2 · kind B2 · utility
12Cited by
2References
22Claims
0Family size
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Key dates
| Filing date | Oct 17, 2016 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Oct 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQyOx atop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQyOx layer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.